Investigation of N - channel Si / SiGe modulation doped field effect transistor with the help of capacitance voltage measurement / (Record no. 46847)
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000 -LEADER | |
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fixed length control field | 01502cam a2200289 a 4500 |
003 - CONTROL NUMBER IDENTIFIER | |
control field | EG-GiCUC |
005 - DATE AND TIME OF LATEST TRANSACTION | |
control field | 20250223031025.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 140813s2012 ua f m 000 0 eng d |
040 ## - CATALOGING SOURCE | |
Original cataloging agency | EG-GiCUC |
Language of cataloging | eng |
Transcribing agency | EG-GiCUC |
041 0# - LANGUAGE CODE | |
Language code of text/sound track or separate title | eng |
049 ## - LOCAL HOLDINGS (OCLC) | |
Holding library | Gift |
097 ## - Thesis Degree | |
Thesis Level | M.Sc |
099 ## - LOCAL FREE-TEXT CALL NUMBER (OCLC) | |
Classification number | Cai01.34.M.Sc.2012.Ya.I |
100 0# - MAIN ENTRY--PERSONAL NAME | |
Personal name | Yasmine Abdelrahman Elogail |
245 10 - TITLE STATEMENT | |
Title | Investigation of N - channel Si / SiGe modulation doped field effect transistor with the help of capacitance voltage measurement / |
Statement of responsibility, etc. | Yasmine Abdelrahman Elogail ; Supervised Erich Kasper , Frank Gunzer , Ahmed Shaker |
260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
Place of publication, distribution, etc. | Cairo : |
Name of publisher, distributor, etc. | Yasmine Abdelrahman Elogail , |
Date of publication, distribution, etc. | 2012 |
300 ## - PHYSICAL DESCRIPTION | |
Extent | 177 Leaves ; |
Dimensions | 30cm |
502 ## - DISSERTATION NOTE | |
Dissertation note | Thesis (M.Sc.) - German University - Faculty of Postgraduate Studies and Scientific Research - Department of Electronics |
520 ## - SUMMARY, ETC. | |
Summary, etc. | This work is concerned with devices based on suained Si / SiGe heterostructures, specifically the N - channel Si / SiGe modulation doped field effect transistor (MODFET). The heterostructures are important building blocks of modern microelectronic devices because carrier channels can be strained which results in higher mobility and carrier channels can buried which results in reduced interface scattering |
700 0# - ADDED ENTRY--PERSONAL NAME | |
Personal name | Ahmed Shaker , |
Relator term | |
700 0# - ADDED ENTRY--PERSONAL NAME | |
Personal name | Erich Kasper , |
Relator term | |
700 0# - ADDED ENTRY--PERSONAL NAME | |
Personal name | Frank Gunzer , |
Relator term | |
856 ## - ELECTRONIC LOCATION AND ACCESS | |
Uniform Resource Identifier | <a href="http://172.23.153.220/th.pdf">http://172.23.153.220/th.pdf</a> |
905 ## - LOCAL DATA ELEMENT E, LDE (RLIN) | |
Cataloger | Nazla |
Reviser | Revisor |
905 ## - LOCAL DATA ELEMENT E, LDE (RLIN) | |
Cataloger | Samia |
Reviser | Cataloger |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Source of classification or shelving scheme | Dewey Decimal Classification |
Koha item type | Thesis |
Source of classification or shelving scheme | Not for loan | Home library | Current library | Date acquired | Full call number | Barcode | Date last seen | Koha item type |
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Dewey Decimal Classification | المكتبة المركزبة الجديدة - جامعة القاهرة | قاعة الثقاقات الاجنبية - الدور الثالث | 11.02.2024 | Cai01.34.M.Sc.2012.Ya.I | 01010110063642000 | 05.07.2024 | Thesis |