MARC details
000 -LEADER |
fixed length control field |
02591cam a2200325 a 4500 |
003 - CONTROL NUMBER IDENTIFIER |
control field |
EG-GiCUC |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
fixed length control field |
210301s2020 ua dh f m 000 0 eng d |
040 ## - CATALOGING SOURCE |
Original cataloging agency |
EG-GiCUC |
Language of cataloging |
eng |
Transcribing agency |
EG-GiCUC |
041 0# - LANGUAGE CODE |
Language code of text/sound track or separate title |
eng |
049 ## - LOCAL HOLDINGS (OCLC) |
Holding library |
Deposite |
097 ## - Thesis Degree |
Thesis Level |
M.Sc |
099 ## - LOCAL FREE-TEXT CALL NUMBER (OCLC) |
Classification number |
Cai01.12.20.M.Sc.2020.Sa.S |
100 0# - MAIN ENTRY--PERSONAL NAME |
Personal name |
Sarah Gamal Ahmed Abouelhasab |
245 10 - TITLE STATEMENT |
Title |
Study of electronic structure of graphene nanomesh with variable pore size / |
Statement of responsibility, etc. |
Sarah Gamal Ahmed Abouelhasab ; Supervised Lobna Mohamed Salah , Hoda Aboushady , Walaa M. Seif |
246 15 - VARYING FORM OF TITLE |
Title proper/short title |
دراسة الخصائص الإلكترونية لشبكات الجرافين ذو الفتحات المتغيرة |
260 ## - PUBLICATION, DISTRIBUTION, ETC. |
Place of publication, distribution, etc. |
Cairo : |
Name of publisher, distributor, etc. |
Sarah Gamal Ahmed Abouelhasab , |
Date of publication, distribution, etc. |
2020 |
300 ## - PHYSICAL DESCRIPTION |
Extent |
116 P. : |
Other physical details |
charts , facsimiles ; |
Dimensions |
25cm |
502 ## - DISSERTATION NOTE |
Dissertation note |
Thesis (M.Sc.) - Cairo University - Faculty of Science - Department of Physics |
520 ## - SUMMARY, ETC. |
Summary, etc. |
Graphene nanomeshes (GNMs) are novel materials that recently raised a lot of interest. They are fabricated by forming a lattice of pores in graphene. Depending on the pore size and pore lattice constant, GNMs can be either semimetallic or semiconducting with a gap large enough ( 0.5 eV) to be considered for transistor applications. The fabrication process is bound to produce some structural disorder due to variations in pore sizes. Recent electronic transport measurements in GNM devices show a degradation of their bandgap in devices having pore-size disorder. It is therefore important to understand the e ect of such variability on the electronic properties of semiconducting GNMs. In this work we use the density functional-based tight binding formalism to calculate the electronic properties of GNM structures with di erent pore sizes, pore densities, and with hydrogen and oxygen pore edge passivations We nd that structural disorder reduces the electronic gap and the carrier group velocity, which may interpret recent transport measurements in GNM devices. Furthermore the trend of the bandgap with structural disorder is not signi cantly a ected by the change in pore edge passivation. Our results show that even with structural disorder, GNMs are still attractive from a transistor device perspective |
530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE |
Additional physical form available note |
Issued also as CD |
653 #4 - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Disordered pores |
653 #4 - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Graphene nanomeshes |
653 #4 - INDEX TERM--UNCONTROLLED |
Uncontrolled term |
Tight binding density functional theory |
700 0# - ADDED ENTRY--PERSONAL NAME |
Personal name |
Hoda Aboushady , |
Relator term |
|
700 0# - ADDED ENTRY--PERSONAL NAME |
Personal name |
Lobna Mohamed Salah , |
Relator term |
|
700 0# - ADDED ENTRY--PERSONAL NAME |
Personal name |
Walaa M. Seif , |
Relator term |
|
905 ## - LOCAL DATA ELEMENT E, LDE (RLIN) |
Cataloger |
Nazla |
Reviser |
Revisor |
905 ## - LOCAL DATA ELEMENT E, LDE (RLIN) |
Cataloger |
Shimaa |
Reviser |
Cataloger |
942 ## - ADDED ENTRY ELEMENTS (KOHA) |
Source of classification or shelving scheme |
Dewey Decimal Classification |
Koha item type |
Thesis |