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Resolution enhancements techniques for the 45nm node and beyond / Ahmed Elsayed Salem Farag Omran ; Supervised Ahmed Hussien Khalil , Hossam A. H. Fahmy , Jochen Schacht

By: Contributor(s): Material type: TextTextLanguage: English Publication details: Cairo : Ahmed Elsayed Salem Farag Omran , 2012Description: 93 P. : plans ; 30cmOther title:
  • أساليب تحسين الدقة في تقنية ٤٥ نانومتر و مابعدها [Added title page title]
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  • Issued also as CD
Dissertation note: Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communication Summary: Semiconductor manufacturing is continuously ramping up the yield of technology processes with transistor dimensions well below the exposure wave length. Light diffraction prevents printing wafer patterns identical to the shapes drawn on the mask. Resolution Enhancements Techniques (RET) are enabling these technologies to manufacture
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Item type Current library Home library Call number Copy number Status Barcode
Thesis Thesis قاعة الرسائل الجامعية - الدور الاول المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.08.M.Sc.2012.Ah.R (Browse shelf(Opens below)) Not for loan 01010110059455000
CD - Rom CD - Rom مخـــزن الرســائل الجـــامعية - البدروم المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.08.M.Sc.2012.Ah.R (Browse shelf(Opens below)) 59455.CD Not for loan 01020110059455000

Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communication

Semiconductor manufacturing is continuously ramping up the yield of technology processes with transistor dimensions well below the exposure wave length. Light diffraction prevents printing wafer patterns identical to the shapes drawn on the mask. Resolution Enhancements Techniques (RET) are enabling these technologies to manufacture

Issued also as CD

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