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Design of read/write circuits suitable for memristor-based memory arrays / Mohamed Sayed Ahmed Mohamed Elshamy ; Supervised Mohamed Sameh Saied , Hassan Moustafa Hassan

By: Contributor(s): Material type: TextTextLanguage: English Publication details: Cairo : Mohamed Sayed Ahmed Mohamed Elshamy , 2014Description: 95 P. : plans ; 30cmOther title:
  • تصميم دوائر كهربائية مناسبه لبرمجة مصفوفات الـذاكره المعـتمده على المقاومه ذات الذاكره - ممرستور [Added title page title]
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Dissertation note: Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communications Summary: Emerging non-volatile universal memory technology is vital for providing the huge storage capabilities required by the nano - computing facilities. The recently found memris - tor, 3the missing fourth circuit element3, is a potential candidate for the next - generation memory and has received extra attention in the last few years. In this work, a literature review of different physical realizations of the memristor is discussed. Following that, a comparison between two of the most promising physical realizations is conducted. Also, different memristor - based applications are reviewed showing that the memory application is the most promising one. Besides, memristor - based memory Read / Write circuit design considerations are demonstrated. Current literatures show destructive reading issue when using the memristor as a memory element
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Item type Current library Home library Call number Copy number Status Date due Barcode
Thesis Thesis قاعة الرسائل الجامعية - الدور الاول المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.08.M.Sc.2014.Mo.D (Browse shelf(Opens below)) Not for loan 01010110066147000
CD - Rom CD - Rom مخـــزن الرســائل الجـــامعية - البدروم المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.08.M.Sc.2014.Mo.D (Browse shelf(Opens below)) 66147.CD Not for loan 01020110066147000

Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communications

Emerging non-volatile universal memory technology is vital for providing the huge storage capabilities required by the nano - computing facilities. The recently found memris - tor, 3the missing fourth circuit element3, is a potential candidate for the next - generation memory and has received extra attention in the last few years. In this work, a literature review of different physical realizations of the memristor is discussed. Following that, a comparison between two of the most promising physical realizations is conducted. Also, different memristor - based applications are reviewed showing that the memory application is the most promising one. Besides, memristor - based memory Read / Write circuit design considerations are demonstrated. Current literatures show destructive reading issue when using the memristor as a memory element

Issued also as CD

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