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Design of a CMOS millimeter wave low noise amplifier using feedback transformer and antienna in 60GHZ band / Mona Fouad Mahmoud Ahmed ; Supervised Essam Abdelhaliem Hashesh , Ahmed Eladawy Emira , Mohamed Mostafa Aboudina

By: Contributor(s): Material type: TextTextLanguage: English Publication details: Cairo : Mona Fouad Mahmoud Ahmed , 2015Description: 68 P. : facsimiles ; 30cmOther title:
  • تصميم الهوائى و مكبر منخفض الضجيج لموجة ملليمترية باستخدام محول بالتأثير الاسترجاعى عند60 جيجا هرتز [Added title page title]
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Dissertation note: Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communication Summary: This work aims to present a fully differential implementation of two - stage low noise amplifier (LNA) in TSMC 65nm CMOS technology using feedback - transformer. The transformer is used to make voltage - feedback that will neutralize with miller capacitance of the field effect transistor (FET). It is realized by using guanella transmission line connection to make transmission line transformer (TLT) [22]. Coupled transmission line (CTL) is used in the TLT and the impedance matching network. The LNA achieves transducer gain (GT) of 12.2dB with noise figure (NF) of 4.27dB, IIP3 is 5.6dBm, and it consumes 30mW from I.2V. This LNA design is the first design that uses TLT
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Thesis Thesis قاعة الرسائل الجامعية - الدور الاول المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.08.M.Sc.2015.Mo.D (Browse shelf(Opens below)) Not for loan 01010110066967000
CD - Rom CD - Rom مخـــزن الرســائل الجـــامعية - البدروم المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.08.M.Sc.2015.Mo.D (Browse shelf(Opens below)) 66967.CD Not for loan 01020110066967000

Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communication

This work aims to present a fully differential implementation of two - stage low noise amplifier (LNA) in TSMC 65nm CMOS technology using feedback - transformer. The transformer is used to make voltage - feedback that will neutralize with miller capacitance of the field effect transistor (FET). It is realized by using guanella transmission line connection to make transmission line transformer (TLT) [22]. Coupled transmission line (CTL) is used in the TLT and the impedance matching network. The LNA achieves transducer gain (GT) of 12.2dB with noise figure (NF) of 4.27dB, IIP3 is 5.6dBm, and it consumes 30mW from I.2V. This LNA design is the first design that uses TLT

Issued also as CD

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