Enhanced model of conductive filament - based memristor and its application on some circuits / Amr Mahmoud Hassan Mahmoud ; Supervised Nadia H. Rafat , Hossam A. H. Fahmy

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Amr Mahmoud Hassan Mahmoud

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TextLanguage: English Publication details: Cairo : Amr Mahmoud Hassan Mahmoud , 2015Description: 86 P. : photographs ; 30cmOther title:

نموذج محسن للميمريستور ذو الشعيرة الموصلة و تطبيقه على بعض الدوائر الكهربية [Added title page title]

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Dissertation note: Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics Summary: Memristors are considered as the fourth passive circuit element and they exhibit very promising features. This thesis aims to introduce a new approach to improve the current modeling of memristors by taking into account trapezoidal electron tunneling barrier. The research is conducted in two stages: device stage, and circuits stage. In the device stage, the proposed approach is applied and solved by two di{uFB00}erent methods. The two derived models are veri{uFB01}ed against published experimental data and the accuracy is improved signi{uFB01}cantly. In the circuits stage, the model is used to simulate some circuit applications by using candence virtuoso

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Item type	Current library	Home library	Call number	Copy number	Status	Date due	Barcode
Thesis	قاعة الرسائل الجامعية - الدور الاول	المكتبة المركزبة الجديدة - جامعة القاهرة	Cai01.13.10.M.Sc.2015.Am.E (Browse shelf(Opens below))		Not for loan		01010110067620000
CD - Rom	مخـــزن الرســائل الجـــامعية - البدروم	المكتبة المركزبة الجديدة - جامعة القاهرة	Cai01.13.10.M.Sc.2015.Am.E (Browse shelf(Opens below))	67620.CD	Not for loan		01020110067620000

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Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics

Memristors are considered as the fourth passive circuit element and they exhibit very promising features. This thesis aims to introduce a new approach to improve the current modeling of memristors by taking into account trapezoidal electron tunneling barrier. The research is conducted in two stages: device stage, and circuits stage. In the device stage, the proposed approach is applied and solved by two di{uFB00}erent methods. The two derived models are veri{uFB01}ed against published experimental data and the accuracy is improved signi{uFB01}cantly. In the circuits stage, the model is used to simulate some circuit applications by using candence virtuoso

Issued also as CD

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