TY  - BOOK
AU  - Yasmine Abdelrahman Elogail
AU  - Ahmed Shaker , 
AU  - Erich Kasper , 
AU  - Frank Gunzer , 
TI  - Investigation of N - channel Si / SiGe modulation doped field effect transistor with the help of capacitance voltage measurement / 
PY  - 2012///
CY  - Cairo : 
PB  - Yasmine Abdelrahman Elogail , 
N1  - Thesis (M.Sc.) - German University - Faculty of Postgraduate Studies and Scientific Research - Department of Electronics
N2  - This work is concerned with devices based on suained Si / SiGe heterostructures, specifically the N - channel Si / SiGe modulation doped field effect transistor (MODFET). The heterostructures are important building blocks of modern microelectronic devices because carrier channels can be strained which results in higher mobility and carrier channels can buried which results in reduced interface scattering
UR  - http://172.23.153.220/th.pdf
ER  -