Mohamed Youssef Hassan Sayed <br/><br/>
Compact model for double gate tunnel field - effect transistor /  
 نموذج مدمج لترانزيستور التأثير المجالى النفقى ثنائى البوابات 
Mohamed Youssef Hassan Sayed ; Supervised Nadia Hussein Rafat , Serag Eldin Elsayed Habib 
 - Cairo :   Mohamed Youssef Hassan Sayed ,   2015 
 - 83 P. :   charts , facsimiles ;   30cm 
<br/><br/>Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics 
<br/><br/> This thesis presents a new compact model for Double-Gate Tunnel Field-Eect Transistor (DG TFET). This physically based model accounts for the tunneling at the source channel interface as well as for the drift-diusion in the channel region. It also accounts for the ON and the subthreshold modes of operation. This model enables the calculation of the I-V, Q-V and C-V characteristics of the device. The model is validated by comparing its results with that calculated numerically by the Sentaurus device simulator 
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<br/><br/><label>Subjects--Index Terms: </label>DG TFET  Double Gate  TFET