TY  - BOOK
AU  - Mohamed Youssef Hassan Sayed
AU  - Nadia Hussein Rafat , 
AU  - Serag Eldin Elsayed Habib , 
TI  - Compact model for double gate tunnel field - effect transistor / 
PY  - 2015///
CY  - Cairo : 
PB  - Mohamed Youssef Hassan Sayed , 
KW  - DG TFET
KW  - Double Gate
KW  - TFET
N1  - Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics; Issued also as CD
N2  - This thesis presents a new compact model for Double-Gate Tunnel Field-E{uFB00}ect Transistor (DG TFET). This physically based model accounts for the tunneling at the source channel interface as well as for the drift-di{uFB00}usion in the channel region. It also accounts for the ON and the subthreshold modes of operation. This model enables the calculation of the I-V, Q-V and C-V characteristics of the device. The model is validated by comparing its results with that calculated numerically by the Sentaurus device simulator
ER  -