Quantum confinement effect on the performance of semiconducting devices / Dina M. M. Atwa ; Supervised Yehia Abdalhameid Badr , Iftitan Alsayed Mohammad
Material type:
- تأثير التحديد الكمى على اداء اجهزة اشباه الموصلات [Added title page title]
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قاعة الرسائل الجامعية - الدور الاول | المكتبة المركزبة الجديدة - جامعة القاهرة | Cai01.24.12.M.Sc.2010.Di.Q (Browse shelf(Opens below)) | Not for loan | 01010110054596000 | ||
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مخـــزن الرســائل الجـــامعية - البدروم | المكتبة المركزبة الجديدة - جامعة القاهرة | Cai01.24.12.M.Sc.2010.Di.Q (Browse shelf(Opens below)) | 54596.CD | Not for loan | 01020110054596000 |
Thesis (M.Sc.) - Cairo University - National Institute of Laser Enhanced Science - Department of Laser Science and Interactions
In this work we present the experimental results of the deposited thim films of semiconductor materials (ZnS and PbS) on three different substrates : fused silica and quartz using 308 nm excimer laser pulses of 2.5 j/cm² at a repetition ratr of 100 Hz . The crystalline targets ZnS or PbS kept at 5 cm apart of the substrate in a clean chamber evacuted by diffusion pump to a base pressure of 5x10⁻⁵ torr
Issued also as CD
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