Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics

The Transistor Laser (TL) device has shown great potential for the use in optical communications in the near future with its superiority in performance to the regularly used Laser Diodes (LDs) in terms of threshold current and optical bandwidth. It also presents a good candidate for on-chip optical interconnects given that it can be integrated in the future on the same chip as analog and digital circuitry. In our work, we have derived a closed-form analytical model for a Single Quantum-Well (QW) Transistor Laser (TL) device. The model incorporates the e{uFB00}ect of thermionic-emission and tunneling at the abrupt emitter-base junction as a boundary condition for the continuity equation of the minority carriers in the base region. By combining the continuity equation with a virtual state based two-level rate equations, a complete analytical solution is obtained for the minority carriers concentration pro{uFB01}le in the base and for the output photons concentration. The carriers pro{uFB01}le is then used to determine the currents at the three terminals of the device (emitter, base, and collector terminals) and the photons concentration is used to determine the output optical power

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