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Charge independent modeling of floating gate mosfet / Ahmed Hossam Eldin Hamed Hassan ; Supervised Amin M. Nassar , Hamdy Abdelhamid

By: Contributor(s): Material type: TextTextLanguage: English Publication details: Cairo : Ahmed Hossam Eldin Hamed Hassan , 2018Description: 69 P. : charts , facsimiles ; 30cmOther title:
  • نموذج مستقل الشحنة لترانزستور تأثير الحقل (المعدني-الأوكسيدى-الشبه موصل) ذو البوابة العائمة [Added title page title]
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  • Issued also as CD
Dissertation note: Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communications Summary: This Thesis studies the Floating- Gate MOSFET (FGMOSFET) for its importance in biomedical engineering and many modern low-power applications. A practical DC model for FGMOSFET is highly needed to be used in circuits simulators. A mathematical model for the parasitic capacitances of FGMOSFET in linear and saturation regions of operation is introduced. Then the resultant capacitance values in drain-current equation is applied. In parallel way, a simulation technique in literature for FGMOSFET is stated. Comparison between proposed model and simulation curves are done. The output curves and characteristic curves for FGMOSFET are drawn for various biases. The model proposed is a spice model for FGMOSFET and can be inserted in any circuit simulator such as Spector and various SPICE programs (i.e. HSPICE, WinSPICE, etc.). The model is verified by using 0.13um CMOS technology and Cadence Simulator based on BSIM3 models. The model is based on n-channel FGMOSFET. The model considers velocity saturation as short channel effect and bulk charge due to drain-to-source voltage as second order effect. The model is not a charge conservative. The maximum percentage of error in linear region is 9.6% and in saturation is 2.6%
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Item type Current library Home library Call number Copy number Status Date due Barcode
Thesis Thesis قاعة الرسائل الجامعية - الدور الاول المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.08.M.Sc.2018.Ah.C (Browse shelf(Opens below)) Not for loan 01010110078327000
CD - Rom CD - Rom مخـــزن الرســائل الجـــامعية - البدروم المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.08.M.Sc.2018.Ah.C (Browse shelf(Opens below)) 78327.CD Not for loan 01020110078327000

Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communications

This Thesis studies the Floating- Gate MOSFET (FGMOSFET) for its importance in biomedical engineering and many modern low-power applications. A practical DC model for FGMOSFET is highly needed to be used in circuits simulators. A mathematical model for the parasitic capacitances of FGMOSFET in linear and saturation regions of operation is introduced. Then the resultant capacitance values in drain-current equation is applied. In parallel way, a simulation technique in literature for FGMOSFET is stated. Comparison between proposed model and simulation curves are done. The output curves and characteristic curves for FGMOSFET are drawn for various biases. The model proposed is a spice model for FGMOSFET and can be inserted in any circuit simulator such as Spector and various SPICE programs (i.e. HSPICE, WinSPICE, etc.). The model is verified by using 0.13um CMOS technology and Cadence Simulator based on BSIM3 models. The model is based on n-channel FGMOSFET. The model considers velocity saturation as short channel effect and bulk charge due to drain-to-source voltage as second order effect. The model is not a charge conservative. The maximum percentage of error in linear region is 9.6% and in saturation is 2.6%

Issued also as CD

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