header
Image from OpenLibrary

Accurate high frequency noise modeling in Si - Ge HBTs and ITS application to an LNA design / Mohamed Aly Abd El aal Selim ; Supervised Aly Ezzat Salama

By: Contributor(s): Language: Eng Publication details: Cairo : Mohamed Aly Abd El aal Selim , 2005Description: 81P : charts ; 30cmOther title:
  • التمثيل الدقيق للضجيج فى الترددات العالية ل ترانزستور و تطبيقها على تصميم المكبر ذو الضجيج المنخفض [Added title page title]
Subject(s): Available additional physical forms:
  • Issued also as CD
Dissertation note: Thesis (M.Sc.) - Cairo University - Faculty Of Engineering - Department Of Electronics and Communications Summary: High - frequency noise in transistors is an important issue in wireless and wired communications , since it limits the performance of integrated circuits working in the GHz range due to large power consumption and low battery lifetime of handheld devices
Tags from this library: No tags from this library for this title. Log in to add tags.
Star ratings
    Average rating: 0.0 (0 votes)
Holdings
Item type Current library Home library Call number Status Date due Barcode
Thesis Thesis قاعة الرسائل الجامعية - الدور الاول المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.08.M.Sc.2005.Mo.A. (Browse shelf(Opens below)) Not for loan 01010110044490000
CD - Rom CD - Rom مخـــزن الرســائل الجـــامعية - البدروم المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.08.M.Sc.2005.Mo.A. (Browse shelf(Opens below)) Not for loan 01020110044490000

Thesis (M.Sc.) - Cairo University - Faculty Of Engineering - Department Of Electronics and Communications

High - frequency noise in transistors is an important issue in wireless and wired communications , since it limits the performance of integrated circuits working in the GHz range due to large power consumption and low battery lifetime of handheld devices

Issued also as CD

There are no comments on this title.

to post a comment.