header
Image from OpenLibrary

Compact model for double gate tunnel field - effect transistor / Mohamed Youssef Hassan Sayed ; Supervised Nadia Hussein Rafat , Serag Eldin Elsayed Habib

By: Contributor(s): Material type: TextTextLanguage: English Publication details: Cairo : Mohamed Youssef Hassan Sayed , 2015Description: 83 P. : charts , facsimiles ; 30cmOther title:
  • نموذج مدمج لترانزيستور التأثير المجالى النفقى ثنائى البوابات [Added title page title]
Subject(s): Available additional physical forms:
  • Issued also as CD
Dissertation note: Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics Summary: This thesis presents a new compact model for Double-Gate Tunnel Field-E{uFB00}ect Transistor (DG TFET). This physically based model accounts for the tunneling at the source channel interface as well as for the drift-di{uFB00}usion in the channel region. It also accounts for the ON and the subthreshold modes of operation. This model enables the calculation of the I-V, Q-V and C-V characteristics of the device. The model is validated by comparing its results with that calculated numerically by the Sentaurus device simulator
Tags from this library: No tags from this library for this title. Log in to add tags.
Star ratings
    Average rating: 0.0 (0 votes)
Holdings
Item type Current library Home library Call number Copy number Status Date due Barcode
Thesis Thesis قاعة الرسائل الجامعية - الدور الاول المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.10.M.Sc.2015.Mo.C (Browse shelf(Opens below)) Not for loan 01010110068864000
CD - Rom CD - Rom مخـــزن الرســائل الجـــامعية - البدروم المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.13.10.M.Sc.2015.Mo.C (Browse shelf(Opens below)) 68864.CD Not for loan 01020110068864000

Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics

This thesis presents a new compact model for Double-Gate Tunnel Field-E{uFB00}ect Transistor (DG TFET). This physically based model accounts for the tunneling at the source channel interface as well as for the drift-di{uFB00}usion in the channel region. It also accounts for the ON and the subthreshold modes of operation. This model enables the calculation of the I-V, Q-V and C-V characteristics of the device. The model is validated by comparing its results with that calculated numerically by the Sentaurus device simulator

Issued also as CD

There are no comments on this title.

to post a comment.