| 000 | 01725cam a2200337 a 4500 | ||
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| 003 | EG-GiCUC | ||
| 005 | 20250223030510.0 | ||
| 008 | 111025s2011 ua d f m 000 0 eng d | ||
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_aEG-GiCUC _beng _cEG-GiCUC |
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| 041 | 0 | _aeng | |
| 049 | _aDeposite | ||
| 097 | _aPh.D | ||
| 099 | _aCai01.24.05.Ph.D.2011.Ah.S | ||
| 100 | 0 | _aAhmed Hassen Ahmed Galmed | |
| 245 | 1 | 0 |
_aStudy of laser induced plasma spectroscopy of metallic layers on semiconductor substrate / _cAhmed Hassen Ahmed Galmed ; Supervised Mohamed Abdelharith Mohamed , Arafa Kamal Kassem |
| 246 | 1 | 5 | _aدراسة أستطياف البلازما المستحثة باليزر لطبقات معدنية على ارضية شبه موصلة |
| 260 |
_aCairo : _bAhmed Hassen Ahmed Galmed , _c2011 |
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_a150 P. : _bcharts ; _c25cm |
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| 502 | _aThesis (Ph.D.) - Cairo University - National Institute of Laser Enhanced Science - Department of Laser Application in Environmental Metroology Photochemistry and Agricultural | ||
| 520 | _aThin film samples of Ti (213nm) deposited onto Si (100) substrate are studied using laser induced plasma spectroscopy (LIPS). Depth profiling was carried out on samples as deposited and after thermal annealing (10⁻⁵ mbar, 450 {u00B0}C) for 1,3 and 6 hours to investigate the metal semiconductor interface dynamics before and after annealing | ||
| 530 | _aIssued also as CD | ||
| 653 | 4 | _aDepth profiling | |
| 653 | 4 | _aLaser induced plasma | |
| 653 | 4 | _aThin films | |
| 700 | 0 |
_aArafa Kamal Kassem , _eSupervisor |
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| 700 | 0 |
_aMohamed Abdelharith Mohamed , _eSupervisor |
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| 856 | _uhttp://172.23.153.220/th.pdf | ||
| 905 |
_aNazla _eRevisor |
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| 905 |
_aSamia _eCataloger |
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| 942 |
_2ddc _cTH |
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| 999 |
_c35990 _d35990 |
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