| 000 | 01502cam a2200289 a 4500 | ||
|---|---|---|---|
| 003 | EG-GiCUC | ||
| 005 | 20250223031025.0 | ||
| 008 | 140813s2012 ua f m 000 0 eng d | ||
| 040 |
_aEG-GiCUC _beng _cEG-GiCUC |
||
| 041 | 0 | _aeng | |
| 049 | _aGift | ||
| 097 | _aM.Sc | ||
| 099 | _aCai01.34.M.Sc.2012.Ya.I | ||
| 100 | 0 | _aYasmine Abdelrahman Elogail | |
| 245 | 1 | 0 |
_aInvestigation of N - channel Si / SiGe modulation doped field effect transistor with the help of capacitance voltage measurement / _cYasmine Abdelrahman Elogail ; Supervised Erich Kasper , Frank Gunzer , Ahmed Shaker |
| 260 |
_aCairo : _bYasmine Abdelrahman Elogail , _c2012 |
||
| 300 |
_a177 Leaves ; _c30cm |
||
| 502 | _aThesis (M.Sc.) - German University - Faculty of Postgraduate Studies and Scientific Research - Department of Electronics | ||
| 520 | _aThis work is concerned with devices based on suained Si / SiGe heterostructures, specifically the N - channel Si / SiGe modulation doped field effect transistor (MODFET). The heterostructures are important building blocks of modern microelectronic devices because carrier channels can be strained which results in higher mobility and carrier channels can buried which results in reduced interface scattering | ||
| 700 | 0 |
_aAhmed Shaker , _eSupervisor |
|
| 700 | 0 |
_aErich Kasper , _eSupervisor |
|
| 700 | 0 |
_aFrank Gunzer , _eSupervisor |
|
| 856 | _uhttp://172.23.153.220/th.pdf | ||
| 905 |
_aNazla _eRevisor |
||
| 905 |
_aSamia _eCataloger |
||
| 942 |
_2ddc _cTH |
||
| 999 |
_c46847 _d46847 |
||