000 01713cam a2200313 a 4500
003 EG-GiCUC
008 150515s2015 ua dh f m 000 0 eng d
040 _aEG-GiCUC
_beng
_cEG-GiCUC
041 0 _aeng
049 _aDeposite
097 _aM.Sc
099 _aCai01.13.10.M.Sc.2015.Mo.C
100 0 _aMohamed Youssef Hassan Sayed
245 1 0 _aCompact model for double gate tunnel field - effect transistor /
_cMohamed Youssef Hassan Sayed ; Supervised Nadia Hussein Rafat , Serag Eldin Elsayed Habib
246 1 5 _aنموذج مدمج لترانزيستور التأثير المجالى النفقى ثنائى البوابات
260 _aCairo :
_bMohamed Youssef Hassan Sayed ,
_c2015
300 _a83 P. :
_bcharts , facsimiles ;
_c30cm
502 _aThesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics
520 _aThis thesis presents a new compact model for Double-Gate Tunnel Field-E{uFB00}ect Transistor (DG TFET). This physically based model accounts for the tunneling at the source channel interface as well as for the drift-di{uFB00}usion in the channel region. It also accounts for the ON and the subthreshold modes of operation. This model enables the calculation of the I-V, Q-V and C-V characteristics of the device. The model is validated by comparing its results with that calculated numerically by the Sentaurus device simulator
530 _aIssued also as CD
653 4 _aDG TFET
653 4 _aDouble Gate
653 4 _aTFET
700 0 _aNadia Hussein Rafat ,
_eSupervisor
700 0 _aSerag Eldin Elsayed Habib ,
_eSupervisor
905 _aNazla
_eRevisor
905 _aSoheir
_eCataloger
942 _2ddc
_cTH
999 _c56457
_d56457