000 | 01713cam a2200313 a 4500 | ||
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003 | EG-GiCUC | ||
008 | 150515s2015 ua dh f m 000 0 eng d | ||
040 |
_aEG-GiCUC _beng _cEG-GiCUC |
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041 | 0 | _aeng | |
049 | _aDeposite | ||
097 | _aM.Sc | ||
099 | _aCai01.13.10.M.Sc.2015.Mo.C | ||
100 | 0 | _aMohamed Youssef Hassan Sayed | |
245 | 1 | 0 |
_aCompact model for double gate tunnel field - effect transistor / _cMohamed Youssef Hassan Sayed ; Supervised Nadia Hussein Rafat , Serag Eldin Elsayed Habib |
246 | 1 | 5 | _aنموذج مدمج لترانزيستور التأثير المجالى النفقى ثنائى البوابات |
260 |
_aCairo : _bMohamed Youssef Hassan Sayed , _c2015 |
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_a83 P. : _bcharts , facsimiles ; _c30cm |
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502 | _aThesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics | ||
520 | _aThis thesis presents a new compact model for Double-Gate Tunnel Field-E{uFB00}ect Transistor (DG TFET). This physically based model accounts for the tunneling at the source channel interface as well as for the drift-di{uFB00}usion in the channel region. It also accounts for the ON and the subthreshold modes of operation. This model enables the calculation of the I-V, Q-V and C-V characteristics of the device. The model is validated by comparing its results with that calculated numerically by the Sentaurus device simulator | ||
530 | _aIssued also as CD | ||
653 | 4 | _aDG TFET | |
653 | 4 | _aDouble Gate | |
653 | 4 | _aTFET | |
700 | 0 |
_aNadia Hussein Rafat , _eSupervisor |
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700 | 0 |
_aSerag Eldin Elsayed Habib , _eSupervisor |
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_aNazla _eRevisor |
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905 |
_aSoheir _eCataloger |
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_2ddc _cTH |
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_c56457 _d56457 |