000			03212cam a2200337 a 4500
003			EG-GiCUC
005			20250223032553.0
008			200905s2019 ua dh f m 000 0 eng d
040			_aEG-GiCUC _beng _cEG-GiCUC
041	0		_aeng
049			_aDeposite
097			_aM.Sc
099			_aCai01.24.12.M.Sc.2019.Al.E
100	0		_aAlshimaa Hassan Moawad Abdelgawad
245	1	0	_aEffect of metal doping on the properties of Cu- Zn-S thin films prepared by spin coating method for photovoltaic devices / _cAlshimaa Hassan Moawad Abdelgawad ; Supervised Ahmed Asaad Ibrahim Khalil , Abdelsatar Mohamed Abdelsatar
246	1	5	_aتأثير التطعيم المعدنى على خواص أغشية رقيقة من النحاس الخارصين الكبريت - المحضرة بطريقة الطلاء المغزلى للأجهزة الفولتوضوئية
260			_aCairo : _bAlshimaa Hassan Moawad Abdelgawad , _c2019
300			_a98 P. : _bcharts , facsimiles ; _c25cm
502			_aThesis (M.Sc.) - Cairo University - National Institute of Laser - Department of Laser Sciences and Interactions
520			_aCopper-zinc-sulfur (Cu-Zn-S) ternary compound was reported as a promising material for variety of optical device applications. This compound was first reported and developed as absorber layer in solar cells in 2013 by N. Kitagawa et. al. [7]. They reported that this material is a p-type semiconductor material that has wide direct band gap and good absorbance to visible light. Cu-Zn-S has been used as alternative to the complex compound CZTS (Se) of four or five elements. In addition, little work has been done in investigating the effect of doping on the properties of Cu-Zn-S thin films. Thus, in this work, preparation of undoped and Ag doped Cu-Zn-S thin films have been reported using low temperature (280{u02DA}c), low cost sol gel spin coating method without sulfurization. For this objective, several films of Cu-Zn-S and Ag doped Cu-Zn-S with different Ag concentrations have been deposited on different substrates (Glass and n, p-type Silicon) with different thickness of 5 or 8 layers. The effects of Ag doping and the film thickness on the structural, morphological, optical and electrical properties of the films prepared on glass substrates have been presented. It has been found that both Ag free Cu-Zn-S thin film sample (S0) and Ag doped Cu-Zn-S thin film samples with 0.5% (S1), 1%(S2) and 2%(S3) show polycrystalline structure of hexagonal and cubic crystal structure using X-ray diffraction. Scanning electron microscope images show that all samples have good homogeneity and cover all the area of the substrates specially, 1% Ag doped sample have less porous structure. Energy dispersive spectroscopy results have been presented for reporting chemical composition of the constituting elements
530			_aIssued also as CD
653		4	_aCu- Zn-S
653		4	_aMetal doping
653		4	_aPhotovoltaic (PV)
700	0		_aAbdelsatar Mohamed Abdelsatar , _eSupervisor
700	0		_aAhmed Asaad Ibrahim Khalil , _eSupervisor
856			_uhttp://172.23.153.220/th.pdf
905			_aNazla _eRevisor
905			_aShimaa _eCataloger
942			_2ddc _cTH
999			_c77583 _d77583