A compact model for double - gate nanoscale transistors /
Islam Elsayed Ali Shaboon
A compact model for double - gate nanoscale transistors / نموذج مدمج للترانزستورات النانومترية مزدوجة البوابة Islam Elsayed Ali Shaboon ; Supervised Serag E. D. Habib , Wael Fikry Farouk - Cairo : Islam Elsayed Ali Shaboon , 2015 - 66 P. : plans ; 30cm
Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communications
Scaling down of MOS devices continuously achieves faster circuit speed, smaller area, and lower power dissipation. Multi - gate MOSFET is emerging as a very promising candidate for next generation ICs as it overcomes several limitations of the classical MOSFET at the deep submicron technology nodes. Therefore, the multi - gate MOSFET is currently a subject of intense scientific research. This thesis aims at enhancing and improving the compact model of the double - gate MOSFET. A review of the compact models developed previously for this MOSFET is given including the models by taur (2004), Hu (2004), AboElhadeed (2010) and garduno (2011). Additionally, we simulate numerically the double - gate MOSFET using the ATLAS device simulator. The results of this numerical device simulation are used as a reference to validate the accuracy of the aforementioned compact models. Next, we modified AboElhadeeds model to include the effects of the source / drain series resistances, and the gate tunneling current. These effects improved the behavior of basic model of AboElhadeed and enabled us to bring down the fitting error from 25% for Hus model and 19% for the original AboElhadeeds model to 5% only
Compact model Double - gate MOSFET
A compact model for double - gate nanoscale transistors / نموذج مدمج للترانزستورات النانومترية مزدوجة البوابة Islam Elsayed Ali Shaboon ; Supervised Serag E. D. Habib , Wael Fikry Farouk - Cairo : Islam Elsayed Ali Shaboon , 2015 - 66 P. : plans ; 30cm
Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communications
Scaling down of MOS devices continuously achieves faster circuit speed, smaller area, and lower power dissipation. Multi - gate MOSFET is emerging as a very promising candidate for next generation ICs as it overcomes several limitations of the classical MOSFET at the deep submicron technology nodes. Therefore, the multi - gate MOSFET is currently a subject of intense scientific research. This thesis aims at enhancing and improving the compact model of the double - gate MOSFET. A review of the compact models developed previously for this MOSFET is given including the models by taur (2004), Hu (2004), AboElhadeed (2010) and garduno (2011). Additionally, we simulate numerically the double - gate MOSFET using the ATLAS device simulator. The results of this numerical device simulation are used as a reference to validate the accuracy of the aforementioned compact models. Next, we modified AboElhadeeds model to include the effects of the source / drain series resistances, and the gate tunneling current. These effects improved the behavior of basic model of AboElhadeed and enabled us to bring down the fitting error from 25% for Hus model and 19% for the original AboElhadeeds model to 5% only
Compact model Double - gate MOSFET