MARC details
| 000 -LEADER |
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| fixed length control field |
02363cam a2200313 a 4500 |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
EG-GiCUC |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
151130s2015 ua e f m 000 0 eng d |
| 040 ## - CATALOGING SOURCE |
|---|
| Original cataloging agency |
EG-GiCUC |
| Language of cataloging |
eng |
| Transcribing agency |
EG-GiCUC |
| 041 0# - LANGUAGE CODE |
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| Language code of text/sound track or separate title |
eng |
| 049 ## - LOCAL HOLDINGS (OCLC) |
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| Holding library |
Deposite |
| 097 ## - Thesis Degree |
|---|
| Thesis Level |
M.Sc |
| 099 ## - LOCAL FREE-TEXT CALL NUMBER (OCLC) |
|---|
| Classification number |
Cai01.13.08.M.Sc.2015.Is.C |
| 100 0# - MAIN ENTRY--PERSONAL NAME |
|---|
| Personal name |
Islam Elsayed Ali Shaboon |
| 245 12 - TITLE STATEMENT |
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| Title |
A compact model for double - gate nanoscale transistors / |
| Statement of responsibility, etc. |
Islam Elsayed Ali Shaboon ; Supervised Serag E. D. Habib , Wael Fikry Farouk |
| 246 15 - VARYING FORM OF TITLE |
|---|
| Title proper/short title |
نموذج مدمج للترانزستورات النانومترية مزدوجة البوابة |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
|---|
| Place of publication, distribution, etc. |
Cairo : |
| Name of publisher, distributor, etc. |
Islam Elsayed Ali Shaboon , |
| Date of publication, distribution, etc. |
2015 |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
66 P. : |
| Other physical details |
plans ; |
| Dimensions |
30cm |
| 502 ## - DISSERTATION NOTE |
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| Dissertation note |
Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communications |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc. |
Scaling down of MOS devices continuously achieves faster circuit speed, smaller area, and lower power dissipation. Multi - gate MOSFET is emerging as a very promising candidate for next generation ICs as it overcomes several limitations of the classical MOSFET at the deep submicron technology nodes. Therefore, the multi - gate MOSFET is currently a subject of intense scientific research. This thesis aims at enhancing and improving the compact model of the double - gate MOSFET. A review of the compact models developed previously for this MOSFET is given including the models by taur (2004), Hu (2004), AboElhadeed (2010) and garduno (2011). Additionally, we simulate numerically the double - gate MOSFET using the ATLAS device simulator. The results of this numerical device simulation are used as a reference to validate the accuracy of the aforementioned compact models. Next, we modified AboElhadeed{u2019}s model to include the effects of the source / drain series resistances, and the gate tunneling current. These effects improved the behavior of basic model of AboElhadeed and enabled us to bring down the fitting error from 25% for Hu{u2019}s model and 19% for the original AboElhadeed{u2019}s model to 5% only |
| 530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE |
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| Additional physical form available note |
Issued also as CD |
| 653 #4 - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
Compact model |
| 653 #4 - INDEX TERM--UNCONTROLLED |
|---|
| Uncontrolled term |
Double - gate |
| 653 #4 - INDEX TERM--UNCONTROLLED |
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| Uncontrolled term |
MOSFET |
| 700 0# - ADDED ENTRY--PERSONAL NAME |
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| Personal name |
Serag Eldin Elsayed Habib , |
| Relator term |
|
| 700 0# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Wael Fikry Farouk , |
| Relator term |
|
| 905 ## - LOCAL DATA ELEMENT E, LDE (RLIN) |
|---|
| Cataloger |
Nazla |
| Reviser |
Revisor |
| 905 ## - LOCAL DATA ELEMENT E, LDE (RLIN) |
|---|
| Cataloger |
Samia |
| Reviser |
Cataloger |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
|---|
| Source of classification or shelving scheme |
Dewey Decimal Classification |
| Koha item type |
Thesis |
