Compact model for double gate tunnel field - effect transistor /
Mohamed Youssef Hassan Sayed
Compact model for double gate tunnel field - effect transistor / نموذج مدمج لترانزيستور التأثير المجالى النفقى ثنائى البوابات Mohamed Youssef Hassan Sayed ; Supervised Nadia Hussein Rafat , Serag Eldin Elsayed Habib - Cairo : Mohamed Youssef Hassan Sayed , 2015 - 83 P. : charts , facsimiles ; 30cm
Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics
This thesis presents a new compact model for Double-Gate Tunnel Field-Eect Transistor (DG TFET). This physically based model accounts for the tunneling at the source channel interface as well as for the drift-diusion in the channel region. It also accounts for the ON and the subthreshold modes of operation. This model enables the calculation of the I-V, Q-V and C-V characteristics of the device. The model is validated by comparing its results with that calculated numerically by the Sentaurus device simulator
DG TFET Double Gate TFET
Compact model for double gate tunnel field - effect transistor / نموذج مدمج لترانزيستور التأثير المجالى النفقى ثنائى البوابات Mohamed Youssef Hassan Sayed ; Supervised Nadia Hussein Rafat , Serag Eldin Elsayed Habib - Cairo : Mohamed Youssef Hassan Sayed , 2015 - 83 P. : charts , facsimiles ; 30cm
Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics
This thesis presents a new compact model for Double-Gate Tunnel Field-Eect Transistor (DG TFET). This physically based model accounts for the tunneling at the source channel interface as well as for the drift-diusion in the channel region. It also accounts for the ON and the subthreshold modes of operation. This model enables the calculation of the I-V, Q-V and C-V characteristics of the device. The model is validated by comparing its results with that calculated numerically by the Sentaurus device simulator
DG TFET Double Gate TFET