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Compact model for double gate tunnel field - effect transistor / (Record no. 56457)

MARC details
000 -LEADER
fixed length control field 01713cam a2200313 a 4500
003 - CONTROL NUMBER IDENTIFIER
control field EG-GiCUC
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 150515s2015 ua dh f m 000 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency EG-GiCUC
Language of cataloging eng
Transcribing agency EG-GiCUC
041 0# - LANGUAGE CODE
Language code of text/sound track or separate title eng
049 ## - LOCAL HOLDINGS (OCLC)
Holding library Deposite
097 ## - Thesis Degree
Thesis Level M.Sc
099 ## - LOCAL FREE-TEXT CALL NUMBER (OCLC)
Classification number Cai01.13.10.M.Sc.2015.Mo.C
100 0# - MAIN ENTRY--PERSONAL NAME
Personal name Mohamed Youssef Hassan Sayed
245 10 - TITLE STATEMENT
Title Compact model for double gate tunnel field - effect transistor /
Statement of responsibility, etc. Mohamed Youssef Hassan Sayed ; Supervised Nadia Hussein Rafat , Serag Eldin Elsayed Habib
246 15 - VARYING FORM OF TITLE
Title proper/short title نموذج مدمج لترانزيستور التأثير المجالى النفقى ثنائى البوابات
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. Cairo :
Name of publisher, distributor, etc. Mohamed Youssef Hassan Sayed ,
Date of publication, distribution, etc. 2015
300 ## - PHYSICAL DESCRIPTION
Extent 83 P. :
Other physical details charts , facsimiles ;
Dimensions 30cm
502 ## - DISSERTATION NOTE
Dissertation note Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics
520 ## - SUMMARY, ETC.
Summary, etc. This thesis presents a new compact model for Double-Gate Tunnel Field-E{uFB00}ect Transistor (DG TFET). This physically based model accounts for the tunneling at the source channel interface as well as for the drift-di{uFB00}usion in the channel region. It also accounts for the ON and the subthreshold modes of operation. This model enables the calculation of the I-V, Q-V and C-V characteristics of the device. The model is validated by comparing its results with that calculated numerically by the Sentaurus device simulator
530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE
Additional physical form available note Issued also as CD
653 #4 - INDEX TERM--UNCONTROLLED
Uncontrolled term DG TFET
653 #4 - INDEX TERM--UNCONTROLLED
Uncontrolled term Double Gate
653 #4 - INDEX TERM--UNCONTROLLED
Uncontrolled term TFET
700 0# - ADDED ENTRY--PERSONAL NAME
Personal name Nadia Hussein Rafat ,
Relator term
700 0# - ADDED ENTRY--PERSONAL NAME
Personal name Serag Eldin Elsayed Habib ,
Relator term
905 ## - LOCAL DATA ELEMENT E, LDE (RLIN)
Cataloger Nazla
Reviser Revisor
905 ## - LOCAL DATA ELEMENT E, LDE (RLIN)
Cataloger Soheir
Reviser Cataloger
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme Dewey Decimal Classification
Koha item type Thesis
Holdings
Source of classification or shelving scheme Not for loan Home library Current library Date acquired Full call number Barcode Date last seen Koha item type Copy number
Dewey Decimal Classification   المكتبة المركزبة الجديدة - جامعة القاهرة قاعة الرسائل الجامعية - الدور الاول 11.02.2024 Cai01.13.10.M.Sc.2015.Mo.C 01010110068864000 22.09.2023 Thesis  
Dewey Decimal Classification   المكتبة المركزبة الجديدة - جامعة القاهرة مخـــزن الرســائل الجـــامعية - البدروم 11.02.2024 Cai01.13.10.M.Sc.2015.Mo.C 01020110068864000 22.09.2023 CD - Rom 68864.CD