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Study of laser induced plasma spectroscopy of metallic layers on semiconductor substrate / Ahmed Hassen Ahmed Galmed ; Supervised Mohamed Abdelharith Mohamed , Arafa Kamal Kassem

By: Contributor(s): Material type: TextTextLanguage: English Publication details: Cairo : Ahmed Hassen Ahmed Galmed , 2011Description: 150 P. : charts ; 25cmOther title:
  • دراسة أستطياف البلازما المستحثة باليزر لطبقات معدنية على ارضية شبه موصلة [Added title page title]
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  • Issued also as CD
Dissertation note: Thesis (Ph.D.) - Cairo University - National Institute of Laser Enhanced Science - Department of Laser Application in Environmental Metroology Photochemistry and Agricultural Summary: Thin film samples of Ti (213nm) deposited onto Si (100) substrate are studied using laser induced plasma spectroscopy (LIPS). Depth profiling was carried out on samples as deposited and after thermal annealing (10⁻⁵ mbar, 450 {u00B0}C) for 1,3 and 6 hours to investigate the metal semiconductor interface dynamics before and after annealing
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Thesis Thesis قاعة الرسائل الجامعية - الدور الاول المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.24.05.Ph.D.2011.Ah.S (Browse shelf(Opens below)) Not for loan 01010110056097000
CD - Rom CD - Rom مخـــزن الرســائل الجـــامعية - البدروم المكتبة المركزبة الجديدة - جامعة القاهرة Cai01.24.05.Ph.D.2011.Ah.S (Browse shelf(Opens below)) 56097.CD Not for loan 01020110056097000

Thesis (Ph.D.) - Cairo University - National Institute of Laser Enhanced Science - Department of Laser Application in Environmental Metroology Photochemistry and Agricultural

Thin film samples of Ti (213nm) deposited onto Si (100) substrate are studied using laser induced plasma spectroscopy (LIPS). Depth profiling was carried out on samples as deposited and after thermal annealing (10⁻⁵ mbar, 450 {u00B0}C) for 1,3 and 6 hours to investigate the metal semiconductor interface dynamics before and after annealing

Issued also as CD

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