Investigation of N - channel Si / SiGe modulation doped field effect transistor with the help of capacitance voltage measurement / Yasmine Abdelrahman Elogail ; Supervised Erich Kasper , Frank Gunzer , Ahmed Shaker
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TextLanguage: English Publication details: Cairo : Yasmine Abdelrahman Elogail , 2012Description: 177 Leaves ; 30cmOnline resources: Dissertation note: Thesis (M.Sc.) - German University - Faculty of Postgraduate Studies and Scientific Research - Department of Electronics Summary: This work is concerned with devices based on suained Si / SiGe heterostructures, specifically the N - channel Si / SiGe modulation doped field effect transistor (MODFET). The heterostructures are important building blocks of modern microelectronic devices because carrier channels can be strained which results in higher mobility and carrier channels can buried which results in reduced interface scattering
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Thesis
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قاعة الثقاقات الاجنبية - الدور الثالث | المكتبة المركزبة الجديدة - جامعة القاهرة | Cai01.34.M.Sc.2012.Ya.I (Browse shelf(Opens below)) | Not for loan | 01010110063642000 |
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Thesis (M.Sc.) - German University - Faculty of Postgraduate Studies and Scientific Research - Department of Electronics
This work is concerned with devices based on suained Si / SiGe heterostructures, specifically the N - channel Si / SiGe modulation doped field effect transistor (MODFET). The heterostructures are important building blocks of modern microelectronic devices because carrier channels can be strained which results in higher mobility and carrier channels can buried which results in reduced interface scattering
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