Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Electronics and Communications

Most activities inside nuclear facilities are carried out in well-shielded areas to achieve the needed safety requirements against the exposure to ionizing radiation. This implies the necessity of employment of remote inspection and handling electronic equipment inside these areas. Therefore, these electronic equipment should be radiation tolerant to be able to work properly over its expected lifetime. The gamma rays are the main threatening ionizing radiation on electronic equipment mounted in nuclear facilities. Total Ionizing Dose (TID) introduced by the gamma radiation into silicon dioxide portions of MOS devices can cause their functionality failure. This work discusses a modeling methodology of the TID effects. These effects are introduced due to the absorption of gamma rays into shallow trench isolation oxides in bulk CMOS devices. The benefit of this modeling methodology is to provide the circuit designers with a tool to test the performance of their circuits at high absorbed doses and to develop radiation tolerant circuit designs suitable for different nuclear facilities. This modeling approach is applied to 130nm predictive technology model for bulk FET devices as a case study and the results show a good agreement with published measured data

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