Compact model for double gate tunnel field - effect transistor / Mohamed Youssef Hassan Sayed ; Supervised Nadia Hussein Rafat , Serag Eldin Elsayed Habib

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Mohamed Youssef Hassan Sayed

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Material type: Text

TextLanguage: English Publication details: Cairo : Mohamed Youssef Hassan Sayed , 2015Description: 83 P. : charts , facsimiles ; 30cmOther title:

نموذج مدمج لترانزيستور التأثير المجالى النفقى ثنائى البوابات [Added title page title]

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Dissertation note: Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics Summary: This thesis presents a new compact model for Double-Gate Tunnel Field-E{uFB00}ect Transistor (DG TFET). This physically based model accounts for the tunneling at the source channel interface as well as for the drift-di{uFB00}usion in the channel region. It also accounts for the ON and the subthreshold modes of operation. This model enables the calculation of the I-V, Q-V and C-V characteristics of the device. The model is validated by comparing its results with that calculated numerically by the Sentaurus device simulator

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Item type	Current library	Home library	Call number	Copy number	Status	Date due	Barcode
Thesis	قاعة الرسائل الجامعية - الدور الاول	المكتبة المركزبة الجديدة - جامعة القاهرة	Cai01.13.10.M.Sc.2015.Mo.C (Browse shelf(Opens below))		Not for loan		01010110068864000
CD - Rom	مخـــزن الرســائل الجـــامعية - البدروم	المكتبة المركزبة الجديدة - جامعة القاهرة	Cai01.13.10.M.Sc.2015.Mo.C (Browse shelf(Opens below))	68864.CD	Not for loan		01020110068864000

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Thesis (M.Sc.) - Cairo University - Faculty of Engineering - Department of Mathematics and Physics

This thesis presents a new compact model for Double-Gate Tunnel Field-E{uFB00}ect Transistor (DG TFET). This physically based model accounts for the tunneling at the source channel interface as well as for the drift-di{uFB00}usion in the channel region. It also accounts for the ON and the subthreshold modes of operation. This model enables the calculation of the I-V, Q-V and C-V characteristics of the device. The model is validated by comparing its results with that calculated numerically by the Sentaurus device simulator

Issued also as CD

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